type ipb017n06n3 g opti mos ?3 power-transistor features ? ideal for high frequency switching and sync. rec. ? optimized technology for dc/dc converters ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? n-channel, normal level ? 100% avalanche tested ? pb-free plating; rohs compliant ? qualified according to jedec 1) for target applications ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 2) 180 a t c =100 c 180 pulsed drain current 3) i d,pulse t c =25 c 720 avalanche energy, single pulse 4) e as i d =100 a, r gs =25 ? 634 mj gate source voltage v gs 20 v power dissipation p tot t c =25 c 250 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 4) see figure 13 for more detailed information value 1) j-std20 and jesd22 2) current is limited by bondwire; with an r thjc =0.6 k/w the chip is able to carry 284 a. 3) see figure 3 for more detailed information v ds 60 v r ds(on),max 1.7 m ? i d 180 a product summary type ipb017n06n3 g package pg-to263-7 marking 017n06n rev. 2.2 page 1 2009-11-16
ipb017n06n3 g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.6 k/w thermal resistance, r thja minimal footprint - - 62 junction - ambient 6 cm2 cooling area 5) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 60 - - v gate threshold voltage v gs(th) v ds = v gs , i d =196 a 234 zero gate voltage drain current i dss v ds =60 v, v gs =0 v, t j =25 c - 0.1 3 a v ds =60 v, v gs =0 v, t j =125 c - 30 300 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =100 a - 1.3 1.7 m ? gate resistance r g - 1.3 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =100 a 99 198 - s values 5) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 2.2 page 2 2009-11-16
ipb017n06n3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 17000 23000 pf output capacitance c oss - 3700 4900 reverse transfer capacitance c rss - 120 - turn-on delay time t d(on) -41-ns rise time t r -80- turn-off delay time t d(off) -79- fall time t f -24- gate char g e characteristics 6) gate to source charge q gs -82-nc gate to drain charge q gd -17- switching charge q sw -49- gate charge total q g - 206 275 gate plateau voltage v plateau - 4.9 - v output charge q oss v dd =30 v, v gs =0 v - 167 222 nc reverse diode diode continous forward current i s - - 180 a diode pulse current i s,pulse - - 720 diode forward voltage v sd v gs =0 v, i f =100 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr -67-ns reverse recovery charge q rr -83-nc 6) see figure 16 for gate charge parameter definition v r =30 v, i f =100a, d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =30 v, f =1 mhz v dd =30 v, v gs =10 v, i d =100 a, r g =1.6 ? v dd =30 v, i d =100 a, v gs =0 to 10 v rev. 2.2 page 3 2009-11-16
ipb017n06n3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 40 80 120 160 200 240 280 0 50 100 150 200 t c [c] p tot [w] 0 40 80 120 160 200 0 50 100 150 200 t c [c] i d [a] rev. 2.2 page 4 2009-11-16
ipb017n06n3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 4.5 v 5 v 5.5 v 6 v 8 v 10 v 0 1 2 3 4 5 6 7 0 80 160 240 320 400 i d [a] r ds(on) [m ? ] 25 c 175 c 0 80 160 240 320 0246 v gs [v] i d [a] 0 40 80 120 160 200 240 280 320 0 80 160 240 i d [a] g fs [s] 4.5 v 5 v 5.5 v 6 v 8 v 10 v 0 80 160 240 320 400 480 012345 v ds [v] i d [a] rev. 2.2 page 5 2009-11-16
ipb017n06n3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =100 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ max 0 1 2 3 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 196 a 1960 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 5 10 4 10 3 10 2 10 1 0204060 v ds [v] c [pf] 25 c 175 c 25 c, max 175 c, max 10 3 10 2 10 1 10 0 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 2.2 page 6 2009-11-16
ipb017n06n3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =100 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 12 v 30 v 48 v 0 2 4 6 8 10 12 0 40 80 120 160 200 240 q gate [nc] v gs [v] 50 55 60 65 70 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1000 1 10 100 1000 t av [s] i as [a] rev. 2.2 page 7 2009-11-16
ipb017n06n3 g pg-to263-7 (d2-pak 7pin) rev. 2.2 page 8 2009-11-16
ipb017n06n3 g published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.2 page 9 2009-11-16
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